(中南大學(xué) 冶金科學(xué)與工程學(xué)院，長沙 410083)
摘 要: 采用電沉積法制備了CuInSe2薄膜材料，研究了制備工藝條件對材料組成、結(jié)構(gòu)與性能的影響。研究結(jié)果表明：最佳的沉積電位范圍為−0.6~−0.8 V(vs SCE)；硒化退火是獲得高質(zhì)量CuInSe2薄膜的必要過程，硒化退火溫度應(yīng)控制在440~610 ℃范圍內(nèi)；在不同沉積電位和不同電解質(zhì)濃度組成溶液中，通過電沉積并在500 ℃下硒化退火均可獲得黃銅礦結(jié)構(gòu)CuInSe2多晶薄膜；沉積電位的負移會使膜層中CuInSe2的相對含量增加，晶型完善，且雜相減少；隨著電解質(zhì)濃度的增加，電沉積CuInSe2退火后結(jié)晶程度變好，顆粒變得粗壯，致密性也有所改善；電沉積并硒化退火后薄膜中的銅銦摩爾比受沉積電位和電解質(zhì)濃度影響較大，當(dāng)沉積電位為−0.7和−0.8 V時，銅銦摩爾比約為1較為理想，且銅銦摩爾比的變化與電解液中CuCl2和InCl3的摩爾比變化一致。
關(guān)鍵字: CuInSe2(CIS)；太陽電池； 薄膜； 電沉積；硒化退火
CuInSe2 thin films by electrodeposition
（School of Metallurgical Science and Engineering, Central South University, Changsha 410083, China）
Abstract:CuInSe2 thin films were obtained by electrodeposition, and the preparation conditions and their effect on performance of CuInSe2 films were investigated. The results show that the optimum ranges of potentials for electrodeposition and annealing temperature are about −0.6−−0.8 V(vs SCE) and 440−610 ℃, respectively. Annealing is a necessary step for getting high-quality CuInSe2 thin films. CuInSe2 thin films can be prepared at different deposition potentials and electrolyte concentrations. As the potential moves to negative, the concentration of CuInSe2 increases, crystallinity and uniformity become better, and impurity phase decreases. The crystallinity and density improve, and the grains grow bulkier as the concentration of electrolyte increases. In all electrodeposited CuInSe2 thin films, the potential and electrolyte concentration can influence the mole ratio of Cu to In greatly. At the potentials of −0.7 and −0.8 V(vs SCE), the mole ratio of Cu to In is very reasonable at about 1. The change of mole ratio of Cu to In has the same trend as that of CuCl2 to InCl3 in electrolyte.
Key words: CuInSe2(CIS); solar cells; thin film; electrodeposition; selenized annealing
