(中南大學(xué) 物理科學(xué)與技術(shù)學(xué)院，長沙410083)
摘 要: 利用射頻反應(yīng)磁控濺射在Si(100)基底上沉積AlN介質(zhì)薄膜，并在不同溫度下對薄膜進(jìn)行快速退火。通過抗電強(qiáng)度測試儀、電容電壓測試C?V、X射線衍射儀、電子能譜儀、原子力顯微鏡和橢圓偏振儀等研究薄膜的擊穿電壓、介電常數(shù)、晶體結(jié)構(gòu)、化學(xué)成分、表面形貌及薄膜的折射率。結(jié)果表明：濺射功率和濺射氣壓對薄膜的擊穿電壓有很大的影響，濺射功率為250 W，氣壓為0.3 Pa時(shí)薄膜的抗電性能較好；薄膜的成分隨濺射氣壓發(fā)生變化，N與Al摩爾比最高達(dá)到0.845；隨退火溫度的增加，薄膜晶體結(jié)構(gòu)發(fā)生非晶—閃鋅礦—纖鋅礦的轉(zhuǎn)變；薄膜的折射率隨退火溫度的升高而增加。
關(guān)鍵字: AlN薄膜；磁控濺射；擊穿電壓；快速退火
（School of Physics Science and Technology, Central South University, Changsha 410083,China）
Abstract:AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering under different sputtering-power and total pressure. And rapid thermal annealing (RTA) was preformed on these films respectively for 5 min under different temperatures. The breakdown voltage, permittivity, crystal structure, composition, surface and refractive index of the thin films were studied by I-V, C-V, XRD, EDS, AFM and elliptical polarization instrument. The results show that the breakdown voltage of the thin films strongly depends on the sputtering-power and total pressure, the greatest breakdown voltage is found at 250 W and 0.3 Pa. EDS analysis shows that the mole ratio of N to Al of AlN thin films changes with total pressure, and reaches its peak value of 0.845 at 0.3 Pa. The crystal structure of the as-deposited thin-films is amorphous, then it transforms from blende structure to wurtzite structure as the rapid thermal annealing(RTA) temperature changes from 600 to 1 000 ℃. The refractive index also increases with the RTA temperature.
Key words: AlN thin films; magnetron sputtering; breakdown voltage; rapid thermal annealing(RTA)
