中國有色金屬學(xué)報(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 21 No. 8 August 2011 |
Mg2Si by solid-state reaction
（1. College of Material and Science Engineering, Chongqing University, Chongqing 400044, China;
2. School of Metallurgy and Material Engineering,
Chongqing University of Science and Technology, Chongqing 401331, China）
Abstract:In order to reduce the oxidation and volatilization caused by Mg element in the traditional methods for synthesizing Mg2Si compounds, Mg2Si thermoelectric materials were prepared by solid state reaction and microwave radiation techniques. Structure and phase composition of the materials were investigated by X-ray diffraction. The electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature from 300 to 700 K. It is found that high purity Mg2Si powders can be obtained with excessive content of 8% Mg from the stoichiometric Mg2Si at 853 K and 2.5 kW for 30 min. A maximum dimensionless figure of merit, ZT, of about 0.13 was obtained for Mg2Si at 600 K.
Key words: Mg2Si; thermoelectric materials; solid state reaction; microwave synthesis
