中國(guó)有色金屬學(xué)報(bào)(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 21 Special 1 March 2011 |
nanotube transistor
（1. National Core Research Center for Hybrid Materials Solution, Pusan National University, Busan 609-735, Korea;
2. Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST),
Daejeon 305-701, Korea）
Abstract:A novel burning technique for making a semiconducting single-walled carbon nanotubes (SWNTs) transistor assembled by the dielectrophoretic force was suggested. The fabrication process consisted of two steps. First, to align and attach a bundle of SWNTs between the source and drain, the alternating (AC) voltage was applied to the electrodes. When a bundle of SWNTs was connected between two electrodes, some of metallic nanotubes and semi-conducing nanotubes existed together. The second step is to burn the metallic SWNTS by applying the voltage between two electrodes. With increasing the voltage, more current flowed through the metallic SWNTs, thus, the metallic SWNTs burnt earlier than the semiconducting one. This technique enables to obtain only semi-conducting SWNTs connection in the transistor. Through the I—V characteristic graph, the moment of metallic SWNTs burning and the characteristic of semi-conducing nanotubes were verified.
Key words: single-walled carbon nanotube (SWNT); semi-conducting carbon nanotube; burning technique; dielectrophoresis
