中國有色金屬學(xué)報(bào)(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 6 No. 2 June 1996 |
（Department of Materials Science and Engineering, Tsinghua University, Beijing100084）
Abstract:Thin films of Ti and Ni deposited on AlN substrate by e-gun evaporation were annealed at the temperatures from 600℃to 800℃and from 600℃to 850℃ for 1 h respectively. Solid-state reaction products between the metal films and AlN substrate under annealing were investigated by X-ray diffraction (XRD) and Ruthford backscattering spectrometry(RBS). TiAl3TiN, and Ti4N3-x including Ti2N were found at the interface between Ti film and AlN substrate for the annealed samples. In Ni/AlN system, NiAl3 and Ni3N were formed at the interface between Ni thin film and AlN substrate for the samples annealed above 600℃. NiAl3 formed at the interface was very dense and hindered the diffusion of Al and N atoms into Ni thin films. As a result, the interface reaction was limited in the vicinity of the interface region.
Key words: thin films interfacial reactions AlN substrate
