中國有色金屬學報(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 7 No. 1 March 1997 |
（1.General Research Institute for Non ferrous Metals; Beijing 100088;
2.Institute of Microelectronics; Tsinghua University; Beijing 100084）
Abstract:Crystallographic orientations and characters of various defects (subgrain boundaries, dislocations etc.) in Si film of heat sink structure SOI (silicon on insulator) prepared by unseeded rapid zone melting recrystallization (ZMR) process with a RF induced graphite strip heater system have been studied with a TEM. The study shows that the process used in this experiment can effectively confine the defects in the predetermined regions of Si film strips on the thicker parts of the SiO 2 layer, and makes the other Si strips with a width of more than 50 μm defect free.
Key words: SOI(silicon on insulator) localized recrystallization crystallographic orientations characters defects TEM
