Abstract:Microstructure of P⁺-Si_0.65Ge_0.35/p-Si HIP infrared detector has been studied by using localization cross-section transmission electron microscopy. The photosensitive region of the detector consists of 6 P⁺-Si_0.65Ge_0.35 layers and 5 UD-Si layers, which are flat and have thickness of 6nm and 32nm, respectively. A stress field exists on the interface between Si_0.65Ge_0.35 and UD-Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si_0.65Ge_0.35 and UD-Si layers on amorphous SiO₂ layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.

Key words: infrared detector; heterojunction semiconductor device; microstructure of semiconductor device; transmission electron microscopy