中國(guó)有色金屬學(xué)報(bào)(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 11 No. 2 April 2001 |
Diffusion kinetics of nitrogen in tantalum during plasma-nitriding
ZHANG De-yuan(張德元)1，2， LIN Qin(林 勤)1， ZENG Wei-jun(曾衛(wèi)軍)2，
LI Fang(李 放)2， XU Lan-ping(許蘭萍)2， FU Qing-f
LI Fang(李 放)2， XU Lan-ping(許蘭萍)2， FU Qing-f
（1. Department of Physical Chemistry, University of Science and Technology Beijing,
Beijing 100083, P.R.China;
2. Institute of Applied Physics of Jiangxi Academy of Sciences,
Nanchang 330029, P.R.China）
Abstract:The activation energies of nitrogen in tantalum on plasma nitriding conditions were calculated according to the experimental data of hardness of plasma-nitriding of tantalum vs time and temperature. The activation energy calculated is 148.873±0.390 kJ/mol. The depth increasing of nitriding layer with time follows square root relation. The nitriding process of tantalum is controlled by diffusion of nitrogen atoms in tantalum solid solution.
Key words: tantalum; nitrogen; diffusion activation energy
