中國有色金屬學(xué)報(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 13 Special 1 May 2003 |
in AlN films deposited on Al substrates
Takao Hanabusa2, Kazaya Kusaka2
（1. School of Materials Science and Engineering,
Harbin Institute of Technology, Harbin 150001, China;
2. Faculty of Engineering, Tokushuima University, Tokushima, Japan）
Abstract:AlN Films were prepared on Al alloy substrates by cathode sputtering.The surface morphology of AlN films was studied by atomic force microscopy (AFM) , the effect of gas pressure on crystal orientation and residual stress in AlN films was investigated by X-ray diffraction. The AFM images show that many nucleated AlN islands appear to be randomly distributed on the Al surface and are fairly round in shape.The X-ray diffraction(XRD) show that the AlN films have a selective orientation in the normal of the substrate and have good selective orientation deposited at low gas pressure . Compressive residual stress are found in films and increases as gas pressure decreases.
Key words: AlN thin film; residual stress; sputtering; gas pressure
