中國有色金屬學(xué)報(bào)(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 15 No. 4 August 2005 |
（1. School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030, China;
2. School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 200336, China）
Abstract: Amorphous , thin films of Ti51.78Ni22.24Pd25.98 alloys were deposited onto n-type(100) Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on Si wafer is found to be higher than 553.1℃. The film heated at 750℃ for 1h quite crystallizes along with some precipitation, but at 550℃ it partially crystallizes. With heating for 50h at 450℃ before crystallization, the film will contain more B19′ phases after succeeding heat-treatment at 650℃, but less B19′ phases after 750℃ treatment are found. The fracture morphology of the film heated at 550℃ shows a flat pattern with more steps, whereas that of the film preparing at 750℃ displays a well-defined fine granulation structure. 550℃-heated film is harder than as-deposited film because of good cohesion between film and Si wafer.
Key words: TiNiPd; thin film; sputter deposition; crystallization; martensitic transformation; fracture morphology; nano-hardness
