Abstract:SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance—temperature were measured. The results show that the curves of lnR versus 1/kT both before and after annealing satisfy the expression of lnR∝∆W/kT, where ∆W is electron excitation energy in the range of 0.014 2−0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25−250 ℃. The resistivity is in the range of 2.4×10−3−4.4×10−3 Ω∙cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature.

Key words: amorphous SiC thin-films; surface morphology; electron excitation energy; resistivity